1/8 target specification march 2005 this is preliminary information on a new product foreseen to be developed. details are subject to change without notice . stp8nk85z STF8NK85Z n-channel 850v -1.1 ? - 8.6a to-220/to-220fp zener-protected supermesh?mosfet table 1: general features typical r ds (on) = 1.1 ? extremely high dv/dt capability improved esd capability 100% avalanche rated gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mos- fets including revolutionary mdmesh? products. applications high current, high speed switching ideal for off-line power supplies, adaptors and pfc table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stp8nk85z STF8NK85Z 850 v 850 v <1.4 ? <1.4 ? 6.7a 6.7a 150 w 35 w to-220 to-220fp 1 2 3 sales type marking package packaging stp8nk85z p8nk85z to-220 tube STF8NK85Z f8nk85z to-220fp tube rev. 2
stp8nk85z - STF8NK85Z 2/8 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 6.7a, di/dt 200a/s, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed table 4: thermal data table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit to-220 to-220fp v ds drain-source voltage (v gs = 0) 850 v v dgr drain-gate voltage (r gs = 20 k ? ) 850 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 6.7 6.7 (*) a i d drain current (continuous) at t c = 100 c 4.3 4.3 (*) a i dm ( ) drain current (pulsed) 26.7 26.7 (*) a p tot total dissipation at t c = 25 c 150 35 w derating factor 1.20 0.28 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 4000 kv dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c to-220 to-220fp rthj-case thermal resistance junction-case max 0.83 3.6 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 6.7 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) tbd mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/8 stp8nk85z - STF8NK85Z electrical characteristics (t case =25 c unless otherwise specified) table 7: on/off table 8: dynamic table 9: source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 850 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100a 33.754.5v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.35 a 1.1 1.4 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 3.35 a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1800 160 27 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 560v tbd pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 400 v, i d = 3.35 a r g =4.7 ? v gs = 10 v (see figure 4) tbd tbd tbd tbd ns ns ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 680 v, i d = 6.7 a, r g =4.7 ?, v gs = 10v (see figure 5) tbd tbd tbd ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 680v, i d = 6.7 a, v gs = 10v (see figure 7) 60 tbd tbd tbd nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 6.7 26.7 a a v sd (1) forward on voltage i sd = 6.7 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.7 a, di/dt = 100a/s v dd = 35v, t j = 25 c (see figure 5) tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.7 a, di/dt = 100a/s v dd = 35v, t j = 150 c (see figure 5) tbd tbd tbd ns c a
stp8nk85z - STF8NK85Z 4/8 figure 3: unclamped inductive load test cir- cuit figure 4: switching times test circuit for re- sistive load figure 5: test circuit for inductive load switching and diode recovery times figure 6: unclamped inductive wafeform figure 7: gate charge test circuit
5/8 stp8nk85z - STF8NK85Z dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stp8nk85z - STF8NK85Z 6/8 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
7/8 stp8nk85z - STF8NK85Z table 10: revision history date revision description of changes 02-mar-2005 1 first release. 03-mar-2005 2 modified value in table 7
stp8nk85z - STF8NK85Z 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america
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